IndiumV3, Main, Repository, bibRecord, 004059

H2 reactivity on the surfaces of In and Sn at 298 K

Identifieur interne : 004059 ( Main/Repository ); précédent : 004058; suivant : 004060

H2 reactivity on the surfaces of In and Sn at 298 K

Auteurs : RBID : Pascal:10-0346911

Descripteurs français

Pascal (Inist)
- Cinétique, Hydrogène, Indium, H, In, Composé minéral, Composé de métal de transition.
Wicri :
- concept : Hydrogène, Composé minéral.

English descriptors

KwdEn :
- Hydrogen, Indium, Inorganic compounds, Kinetics, Transition element compounds.

Abstract

The reactivity of _H2 gas with the In and Sn surfaces was quantitatively measured by a volumetric method at pressures ranging from 10^-7 to 10^-2 Pa at 298 K. Significant enhancement of H₂ reactivity was observed when O₂ or H₂O preadsorbed on the surface of In and Sn before H₂ exposure. The formation of the oxygen deficient SnO_2-x and In₂O_3-2 in the surface layers is proposed as a reason for such a facilitating the H₂ dissociation and resulting in the enhancement of the H₂ reactivity at 298 K.

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Pascal:10-0346911

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">H<sub>2</sub>
 reactivity on the surfaces of In and Sn at 298 K</title>
<author><name sortKey="Terashima, Masahiro" uniqKey="Terashima M">Masahiro Terashima</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Energy Science and Engineering, School of Engineering, Tokai University, 1117 Kita-Kaname</s1>
<s2>Hiratsuka, Kanagawa 259-1292</s2>
<s3>JPN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Japon</country>
<wicri:noRegion>Hiratsuka, Kanagawa 259-1292</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Yamakawa, Rui" uniqKey="Yamakawa R">Rui Yamakawa</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Energy Science and Engineering, School of Engineering, Tokai University, 1117 Kita-Kaname</s1>
<s2>Hiratsuka, Kanagawa 259-1292</s2>
<s3>JPN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
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<sZ>4 aut.</sZ>
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<country>Japon</country>
<wicri:noRegion>Hiratsuka, Kanagawa 259-1292</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Tani, Yukinori" uniqKey="Tani Y">Yukinori Tani</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Energy Science and Engineering, School of Engineering, Tokai University, 1117 Kita-Kaname</s1>
<s2>Hiratsuka, Kanagawa 259-1292</s2>
<s3>JPN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
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<country>Japon</country>
<wicri:noRegion>Hiratsuka, Kanagawa 259-1292</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Uchida, Hirohisa" uniqKey="Uchida H">Hirohisa Uchida</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Energy Science and Engineering, School of Engineering, Tokai University, 1117 Kita-Kaname</s1>
<s2>Hiratsuka, Kanagawa 259-1292</s2>
<s3>JPN</s3>
<sZ>1 aut.</sZ>
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<country>Japon</country>
<wicri:noRegion>Hiratsuka, Kanagawa 259-1292</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Kato, Shunsuke" uniqKey="Kato S">Shunsuke Kato</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Energy Science and Engineering, School of Engineering, Tokai University, 1117 Kita-Kaname</s1>
<s2>Hiratsuka, Kanagawa 259-1292</s2>
<s3>JPN</s3>
<sZ>1 aut.</sZ>
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<country>Japon</country>
<wicri:noRegion>Hiratsuka, Kanagawa 259-1292</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Matsumura, Yoshihito" uniqKey="Matsumura Y">Yoshihito Matsumura</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Energy Science and Engineering, School of Engineering, Tokai University, 1117 Kita-Kaname</s1>
<s2>Hiratsuka, Kanagawa 259-1292</s2>
<s3>JPN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
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<sZ>5 aut.</sZ>
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<country>Japon</country>
<wicri:noRegion>Hiratsuka, Kanagawa 259-1292</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Uchida, Haru Hisa" uniqKey="Uchida H">Haru-Hisa Uchida</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Human Developments, School of Humanities and Culture, Tokai University, 1117 Kita-Kaname</s1>
<s2>Hiratsuka, Kanagawa 259-1292</s2>
<s3>JPN</s3>
<sZ>7 aut.</sZ>
</inist:fA14>
<country>Japon</country>
<wicri:noRegion>Hiratsuka, Kanagawa 259-1292</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Sato, Masashi" uniqKey="Sato M">Masashi Sato</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Applied Chemistry, School of Engineering, Tokai University, 1117 Kita-Kaname</s1>
<s2>Hiratsuka, Kanagawa 259-1292</s2>
<s3>JPN</s3>
<sZ>8 aut.</sZ>
</inist:fA14>
<country>Japon</country>
<wicri:noRegion>Hiratsuka, Kanagawa 259-1292</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Yartys, Volodymyr A" uniqKey="Yartys V">Volodymyr A. Yartys</name>
<affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Institute for Energy Technology, P.O. Box 40</s1>
<s2>2027 Kjeller</s2>
<s3>NOR</s3>
<sZ>9 aut.</sZ>
<sZ>10 aut.</sZ>
</inist:fA14>
<country>Norvège</country>
<wicri:noRegion>2027 Kjeller</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Maehlen, Jan Petter" uniqKey="Maehlen J">Jan Petter Maehlen</name>
<affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Institute for Energy Technology, P.O. Box 40</s1>
<s2>2027 Kjeller</s2>
<s3>NOR</s3>
<sZ>9 aut.</sZ>
<sZ>10 aut.</sZ>
</inist:fA14>
<country>Norvège</country>
<wicri:noRegion>2027 Kjeller</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">10-0346911</idno>
<date when="2010">2010</date>
<idno type="stanalyst">PASCAL 10-0346911 INIST</idno>
<idno type="RBID">Pascal:10-0346911</idno>
<idno type="wicri:Area/Main/Corpus">004194</idno>
<idno type="wicri:Area/Main/Repository">004059</idno>
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<seriesStmt><idno type="ISSN">0169-4332</idno>
<title level="j" type="abbreviated">Appl. surf. sci.</title>
<title level="j" type="main">Applied surface science</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Hydrogen</term>
<term>Indium</term>
<term>Inorganic compounds</term>
<term>Kinetics</term>
<term>Transition element compounds</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Cinétique</term>
<term>Hydrogène</term>
<term>Indium</term>
<term>H</term>
<term>In</term>
<term>Composé minéral</term>
<term>Composé de métal de transition</term>
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<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Hydrogène</term>
<term>Composé minéral</term>
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</teiHeader>
<front><div type="abstract" xml:lang="en">The reactivity of <sub>H</sub>
2 gas with the In and Sn surfaces was quantitatively measured by a volumetric method at pressures ranging from 10<sup>-7</sup>
 to 10<sup>-2</sup>
 Pa at 298 K. Significant enhancement of H<sub>2</sub>
 reactivity was observed when O<sub>2</sub>
 or H<sub>2</sub>
O preadsorbed on the surface of In and Sn before H<sub>2</sub>
 exposure. The formation of the oxygen deficient SnO<sub>2-x</sub>
 and In<sub>2</sub>
O<sub>3-2</sub>
 in the surface layers is proposed as a reason for such a facilitating the H<sub>2</sub>
 dissociation and resulting in the enhancement of the H<sub>2</sub>
 reactivity at 298 K.</div>
</front>
</TEI>
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<fA06><s2>10</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>H<sub>2</sub>
 reactivity on the surfaces of In and Sn at 298 K</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>TERASHIMA (Masahiro)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>YAMAKAWA (Rui)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>TANI (Yukinori)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>UCHIDA (Hirohisa)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>KATO (Shunsuke)</s1>
</fA11>
<fA11 i1="06" i2="1"><s1>MATSUMURA (Yoshihito)</s1>
</fA11>
<fA11 i1="07" i2="1"><s1>UCHIDA (Haru-Hisa)</s1>
</fA11>
<fA11 i1="08" i2="1"><s1>SATO (Masashi)</s1>
</fA11>
<fA11 i1="09" i2="1"><s1>YARTYS (Volodymyr A.)</s1>
</fA11>
<fA11 i1="10" i2="1"><s1>MAEHLEN (Jan Petter)</s1>
</fA11>
<fA14 i1="01"><s1>Department of Energy Science and Engineering, School of Engineering, Tokai University, 1117 Kita-Kaname</s1>
<s2>Hiratsuka, Kanagawa 259-1292</s2>
<s3>JPN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Department of Human Developments, School of Humanities and Culture, Tokai University, 1117 Kita-Kaname</s1>
<s2>Hiratsuka, Kanagawa 259-1292</s2>
<s3>JPN</s3>
<sZ>7 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>Department of Applied Chemistry, School of Engineering, Tokai University, 1117 Kita-Kaname</s1>
<s2>Hiratsuka, Kanagawa 259-1292</s2>
<s3>JPN</s3>
<sZ>8 aut.</sZ>
</fA14>
<fA14 i1="04"><s1>Institute for Energy Technology, P.O. Box 40</s1>
<s2>2027 Kjeller</s2>
<s3>NOR</s3>
<sZ>9 aut.</sZ>
<sZ>10 aut.</sZ>
</fA14>
<fA20><s1>3321-3324</s1>
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<fA21><s1>2010</s1>
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<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>16002</s2>
<s5>354000181714630560</s5>
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<fA44><s0>0000</s0>
<s1>© 2010 INIST-CNRS. All rights reserved.</s1>
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<fC01 i1="01" l="ENG"><s0>The reactivity of <sub>H</sub>
2 gas with the In and Sn surfaces was quantitatively measured by a volumetric method at pressures ranging from 10<sup>-7</sup>
 to 10<sup>-2</sup>
 Pa at 298 K. Significant enhancement of H<sub>2</sub>
 reactivity was observed when O<sub>2</sub>
 or H<sub>2</sub>
O preadsorbed on the surface of In and Sn before H<sub>2</sub>
 exposure. The formation of the oxygen deficient SnO<sub>2-x</sub>
 and In<sub>2</sub>
O<sub>3-2</sub>
 in the surface layers is proposed as a reason for such a facilitating the H<sub>2</sub>
 dissociation and resulting in the enhancement of the H<sub>2</sub>
 reactivity at 298 K.</s0>
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H2 reactivity on the surfaces of In and Sn at 298 K

H2 reactivity on the surfaces of In and Sn at 298 K

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri